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Transport properties of single crystal
Authors:Shigeyuki Ishida  Masamichi Nakajima  Hijiri Kito  Yasuhide Tomioka  Toshimitsu Ito  Akira Iyo  Hiroshi Eisaki  Shin-ichi Uchida
Institution:aDepartment of Physics, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan;bNational Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Central 2, Umezono, Tsukuba, Ibaraki 305-8568, Japan;cJST, Transformative Research-Project on Iron Pnictides (TRIP), 5 Sanbancho, Chiyoda, Tokyo 102-0075, Japan
Abstract:Transport properties of BaNi2P2 single crystals prepared by high-pressure synthesis method have been investigated. The temperature dependence of the resistivity is that of a typical metal with the anisotropy ratio ρperpendicular/ρdouble vertical bar of not, vert, similar6.3 and suggests that electron–phonon interaction dominates the scattering mechanism. We have also found that the Hall effect and the magnetoresistance can be explained by a two-carrier model which is consistent with a multiple-band structure with both hole and electron characters.
Keywords:color:black" href="/science?_ob=MathURL&_method=retrieve&_udi=B6TVJ-4WDGCR9-2&_mathId=mml11&_user=10&_cdi=5536&_rdoc=14&_acct=C000069468&_version=1&_userid=6189383&md5=bcfa83aa62dbdafbc5a04dec614ce8eb" title="Click to view the MathML source"  ThCr2Si2-type structure" target="_blank">alt="Click to view the MathML source">ThCr2Si2-type structure  Hall effect  Magnetoresistance
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