Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
| |
Authors: | Yang Ling Hu Gui-Zhou Hao Yue Ma Xiao-Hu Quan Si Yang Li-Yuan and Jiang Shou-Gao |
| |
Institution: | Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071,China |
| |
Abstract: | This paper investigates the impact of electrical degradation
and current collapse on different thickness SiNx passivated
AlGaN/GaN high electron mobility transistors. It finds that
higher thickness SiNx passivation can significantly improve the
high-electric-field reliability of a device. The degradation mechanism
of the SiNx passivation layer under ON-state stress has also
been discussed in detail. Under the ON-state stress, the strong
electric-field led to degradation of SiNx passivation
located in the gate-drain region. As the thickness of SiNx
passivation increases, the density of the surface state will be
increased to some extent. Meanwhile, it is found that the high NH3
flow in the plasma enhanced chemical vapour deposition process could
reduce the surface state and suppress the current collapse. |
| |
Keywords: | SiNx passivated AlGaN/GaN high electron mobility
transistors degradation current collapse surface
states |
本文献已被 CNKI 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |