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Effect of neutrons on silicon diodes |
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| Authors: | V D Korshunov E A Kostyuchenko |
| Institution: | (1) Ul'yanov Polytechnic Institute, USSR |
| Abstract: | Silicon mesa diodes were exposed to neutrons with an energy of 1 MeV. The integrated neutron flux was 8.5 · 1014 neutrons/cm2. Static voltampere characteristics were plotted using the experimental data. |
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