Indium and aluminium-doped ZnO thin films deposited onto FTO substrates: nanostructure,optical, photoluminescence and electrical properties |
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Authors: | M Benhaliliba C E Benouis M S Aida F Yakuphanoglu A Sanchez Juarez |
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Institution: | (1) Physics Department, Sciences Faculty, USTOMB University, BP1505 Oran, Algeria;(2) Thin Films & Plasma Lab, Physics Department, Ment. University, 25000 Constantine, Algeria;(3) Physics Department, Faculty of Sciences and Arts, Firat University, 23119 Elazig, Turkey;(4) Centro de Investigacion en Energia -UNAM, Temixco, Morelos, 62580, Mexico; |
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Abstract: | The microstructure, optical, photoluminescence and electrical properties of ZnO based films deposited onto FTO glass substrates
by ultrasonic spray pyrolysis have been investigated. For comparison and a better understanding of physical properties of
indium- and aluminum-doped ZnO and undoped ZnO thin films, X-ray diffraction analysis, photoluminescence spectra, optical,
SEM texture and electrical conductivity analyses were performed. The AZO and IZO films exhibit the nanofiber structure with
diameters 260 and 400 nm. X-ray diffraction showed all samples to be polycrystalline with hexagonal ZnO. The optical band
gaps of the films were varied by Al and In dopants. The photoluminescence spectra of the films show a weak broad in the visible
range and shifted to green emission for indium doping and to the green blue emission for aluminum as dopant. The width of
the PL spectra for aluminum-doped films is too large compared to those of the indium-doped ones. The electrical conductivity
of the ZnO film changes with Al and In dopants. The position of donor levels changes with In and Al dopants and approaches
the conduction band level with the metal dopants. The obtained results suggest that the metal doping has a clear effect upon
the growth, optical, photoluminescence and electrical conductivity properties of the ZnO films. |
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