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Transmission-mode GaN photocathode based on graded Al_xGa_(1-x)N buffer layer |
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| Authors: | Xiaoqing Du Benkang Chang Yunsheng Qian Pin Gao Key Laboratory of Optoelectronic Technology Systems of Ministry of Education of China College of Optoelectronic Engineering Chongqing University Chongqing China Institute of Electronic Engineering Opto-Electric Technology Nanjing University of Science Technology Nanjing China |
| Affiliation: | Xiaoqing Du1,Benkang Chang2,Yunsheng Qian2,and Pin Gao2 1 Key Laboratory of Optoelectronic Technology and Systems of Ministry of Education of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China 2 Institute of Electronic Engineering and Opto-Electric Technology,Nanjing University of Science and Technology,Nanjing 210094,China |
| Abstract: | We create a GaN photocathode based on graded Alx Ga1-x N buffer layers to overcome the influence of buffer-emission layer interface on the photoemission of transmission-mode GaN photocathodes.A gateshaped spectral response with a 260-nm starting wavelength and a 375-nm cut-off wavelength is obtained.Average quantum efficiency is 15% and short wavelength responses are almost equivalent to long wavelength ones.The fitted interface recombination velocity is 5×104 cm/s,with negligible magnitude,proving that the design of the graded buffer layers is efficient in obtaining good interface quality between the buffer and the emission layer. |
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