The effect of external electric field on mass attenuation coefficients of some semiconductor

In this study, we measured the mass attenuation coefficient of n-type GaAs, p-type GaAs, n-type Si and Au/n-Si/n⁺Si/Al samples with and without external electric field. Samples were set in perpendicular direction to the 100?mCi ²⁴¹Am radioactive source and counts were made with a NaI(Tl) detector. It was observed that when an external electric field was applied onto the samples, mass attenuation coefficients were increased. Results showed that this study is consistent with previous studies.