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The effect of thermal reactor neutron irradiation on semi-insulating GaN |
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| Authors: | Jie Qiu Evan Katz Chung-Han Lin Leonard J Brillson |
| Affiliation: | 1. Nuclear Engineering Program, Department of Mechanical and Aerospace Engineering, Ohio State University, 201 W. 19th Avenue, Columbus, OH 43210, USA;2. Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA;3. Department of Physics, The Ohio State University, Columbus, OH 43210, USA |
| Abstract: | Semi-insulating Gallium nitride was irradiated by fast and thermal neutrons with fluences from 1014 to 1016 n/cm2. Depth-resolved cathodoluminescence spectroscopy was used to determine defects changes before and after irradiation. The results revealed two kinds of defects affected near-band emission recombination from two opposite directions. One was attributed to irradiation-induced N vacancies that contribute to near-band emission recombination. Another was attributed to irradiation-induced deep level defects that contribute to sub-band gap recombination and thus decrease the near-band emission recombination. |
| Keywords: | semi-insulating GaN radiation detection neutron irradiation cathodoluminescence |