Atomic collisions in semiconductors |
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| Authors: | R. Smith R. P. Webb |
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| Affiliation: | 1. Department of Mathematical Sciences , Loughborough University , Leicestershire, LE11 3TU, UK;2. Department of Electronics and Electrical Engineering , University of Surrey , Guildford, GU2 5XH, UK |
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| Abstract: | Abstract Energetic particle bombardment of semi-conductors (Si and GaAs) is studied by means of Molecular Dynamics simulations using many-body potentials. The simulations show that the diamond lattice structures can lead to the trajectories of particles within the crystal being channelled even at low energies. Some results concerning damage production, low energy implantation profiles and angular distributions of ejected particles are presented. |
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| Keywords: | semiconductors many-body potentials implantation damage sputtering |
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