Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm |
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| Authors: | D. Chithrani R. L. Williams J. Lefebvre P. J. Poole G. C. Aers |
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| Affiliation: | a Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6;b Department of Metallurgy and Materials Science, University of Toronto, Toronto, Canada M5S 3E4 |
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| Abstract: | We discuss the preparation and spectroscopic characterisation of a single InAs/InP quantum dot suitable for long-distance quantum key distribution applications around λ=1.55 μm. The dot is prepared using a site-selective growth technique which allows a single dot to be deposited in isolation at a controlled spatial location. Micro-photoluminescence measurements as a function of exciton occupation are used to determine the electronic structure of the dot. Biexciton emission, shell filling and many-body re-normalization effects are observed for the first time in single InAs/InP quantum dots. |
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| Keywords: | Author Keywords: Quantum dots Excitons Photoluminescence |
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