| 掺氟汞系1223相的结构与超导电性 |
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| 引用本文： | 高孝恢,李洁,肖慎修,陈天朗. 掺氟汞系1223相的结构与超导电性[J]. 物理化学学报, 1999, 15(10): 877-882. DOI: 10.3866/PKU.WHXB19991004 |
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| 作者姓名： | 高孝恢 李洁 肖慎修 陈天朗 |
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| 作者单位： | Department of Chenistry,Central South University of Techology,Changsha 410083,Department of Chemistry,Sichuan United University,Chengdu 610064 |
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| 摘 要： | 合成了掺氟汞基铜酸盐超导体 .研究证明氟进入了 1 2 2 3相 ,占据元胞中O( 3)的晶格位置 .掺氟烧结而不退火样品的超导临界温度Tc 为 1 33.8K ,比不掺氟烧结标准样品的Tc 提高约 2 2K ,显示氟掺杂能够使样品中载流子浓度nh 不经退火一步接近最佳值 .F代O( 3)收缩了CuO2 面与电荷储存层间距离及氟的电负性比氧大是提高Tc 的主要原因 .
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| 关 键 词： | 汞基氧氟铜酸盐 类钙钛矿结构 超导电性 掺杂 |
| 收稿时间： | 1998-11-05 |
| 修稿时间： | 1999-01-28 |
Structure and Superconductivity of 1223 Phase in F-doped Hg-based Superconductor |
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| Gao Xiaohui,Li Jie,Xiao Shenxiu,Chen Tianlang. Structure and Superconductivity of 1223 Phase in F-doped Hg-based Superconductor[J]. Acta Physico-Chimica Sinica, 1999, 15(10): 877-882. DOI: 10.3866/PKU.WHXB19991004 |
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| Authors: | Gao Xiaohui Li Jie Xiao Shenxiu Chen Tianlang |
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| Affiliation: | Department of Chenistry,Central South University of Techology,Changsha 410083|Department of Chemistry,Sichuan United University,Chengdu 610064 |
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| Abstract: | 1223 Hg-based Hg-Ba-Ca-Cu-(O,F) superconductor was prepared. It was proved that F entered 1223 superconductive phase and located at O(3) lattice site. The critical temperature T c of the samples doped with fluoride but without annealling is as high as 133.8 K, which is ～22 K higher than that of Hg Ba Ca Cu O standard samples. With the substitution of F with O, the carrier′s concentration in the superconductor is nearly close to the optimum value, which leads T c of F-doped samples increasing greatly. |
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| Keywords: | Hg based supercondutor Quasi perovskite structure Superconductivity Doping fluoride |
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