Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering |
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Authors: | S Valdueza-Felip FB Naranjo M González-Herráez L Lahourcade E Monroy S Fernández |
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Institution: | 1. Departamento de Electrónica, Escuela Politécnica, Universidad de Alcalá, Campus Universitario, 28871 Alcalá de Henares, Madrid, Spain;2. CEA-CNRS Group “NanoPhysique et SemiConducteurs”, CEA-Grenoble, INAC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;3. Departamento de Energías Renovables, Energía Solar Fotovoltaica, Centro de Investigaciones Energéticas, Medioambientales y Tecnológicas (CIEMAT), Avda. Complutense 22, 28040 Madrid, Spain |
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Abstract: | We present a detailed investigation on the influence of deposition conditions on morphological, structural and optical properties of InN films deposited on Si(1 1 1) and GaN-on-sapphire templates by reactive radio-frequency (RF) sputtering. The deposition parameters under study are nitrogen content in the sputtering gas, substrate–target distance, substrate temperature and RF power. X-ray diffraction measurements confirm the (0 0 0 1) preferred growth orientation and the wurtzite crystallographic structure of the material. For optimized deposition conditions, InN on Si(1 1 1) substrates presents smooth surface with root-mean-square roughness ∼1 nm. Surface quality of the InN films can be further improved by deposition on GaN-on-sapphire templates, achieving root-mean-square roughness as low as ∼0.4 nm, comparable to that of the underlying substrate. The room-temperature absorption edge is located at 1.70 eV. Intense low-temperature photoluminescence peaking at 1.60 eV is observed. |
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Keywords: | A1 Atomic force microscopy A1 X-ray diffraction A3 Polycrystalline deposition B1 Nitrides B2 Semiconductor III&ndash V materials |
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