Growth and interface study of 2 in diameter CdZnTe by THM technique |
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| Authors: | UN Roy S WeilerJ Stein |
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| Institution: | ICx Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830, USA |
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| Abstract: | Growth interface of large diameter CdZnTe ingots grown from Te solution by travelling heater method have been studied. Both macroscopic and microscopic investigations were carried out. The results indicated that the shape of the interface strongly governs the grain growth on the ingot, while the microscopic morphology of the growth interface is responsible for Te inclusions in the grown crystal. |
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| Keywords: | A1 Growth interface A2 THM B2 CdZnTe |
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