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Growth and Raman spectroscopic characterization of As4S4 (II) single crystals
Authors:Atsushi Kyono
Institution:Division of Earth Evolution Sciences, Graduate School of Life and Environmental Sciences, University of Tsukuba, 1-1-1 Tennodai Tsukuba, Ibaraki 305-8572, Japan
Abstract:As described by Kutoglu (1976 16]), single crystals of As4S4 (II) phase have been grown using a new two-step synthesis that drastically increases the reproducibility that is attainable in synthetic experiments. First, through photo-induced phase transformation, pararealgar powder is prepared as a precursor instead of AsS melt. Then it is dissolved and recrystallized from CS2 solvent. Results show that single crystals of the As4S4 (II) phase were obtained reproducibly through the dissolution–recrystallization process. Single crystals of As4S4 (II) obtained using this method were translucent and showed a uniform yellow-orange color. The crystal exhibits a platelet-like shape as a thin film with well-developed faces (0 1 0) and (0 1¯ 0). The grown crystals are as large as 0.50×0.50×0.01 mm. They were characterized using powder and single crystal X-ray diffraction techniques to confirm the phase identification and the lattice parameters. The As4S4 (II) phase crystallizes in monoclinic system with cell parameters a=11.202(4) Å, b=9.954(4) Å, c=7.142(4) Å, β=92.81(4)°, V=795.4(6) Å3, which shows good agreement with the former value. Raman spectroscopic studies elucidated the behavior of the substance and the relation among phases of tetra-arsenic tetrasulfide.
Keywords:A1  Recrystallization  A1  X-ray diffraction  A2  Growth from solutions  B1  Sulfides  B2  Semiconducting materials
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