Compare of the electronic structures of F- and Ir-doped SmFeAsO |
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| Authors: | Y Zhang CH Cheng YL Chen YJ Cui WG You H Zhang Y Zhao |
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| Institution: | 1. Key Laboratory of Advanced Technology of Materials (Ministry of Education), Superconductivity R&D Center, Southwest Jiaotong University, Chengdu 610031, China;2. School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW, Australia;3. Department of Physics, Peking University, Beijing 100871, China |
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| Abstract: | The electronic structures of Fe-based superconductor SmFeAsO1−xFx and SmFe1−yIryAsO are compared through X-ray photoemission spectroscopy in this study. With fluorine or iridium doping, the electronic structure and chemical environment of the SmFeAsO system were changed. The fluorine was doped at an oxygen site which introduced electrons to a reservoir Sm–O layer. The iridium was doped at an Fe site which introduced electrons to a conduction Fe–As layer directly. In a parent material SmFeAsO, the magnetic ordering corresponding to Fe3d in the low-spin state is suppressed by both fluorine and iridium doping through suppressing the magnetism of 3d itinerant electrons. Compared to fluorine doping, iridium doping affected superconductivity more significantly due to an iridium-induced disorder in FeAs layers. |
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| Keywords: | X-ray photoemission spectroscopy Electronic structure Fe-based superconductor SmFeAsO1&minus xFx SmFe1&minus yIryAsO |
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