AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment |
| |
Authors: | V Dimastrodonato LO Mereni RJ Young E Pelucchi |
| |
Institution: | 1. Tyndall National Institute “Lee Maltings”, Prospect Row, University College Cork, Cork, Ireland;2. Department of Physics, Lancaster University, Lancaster LA1 4WY, UK |
| |
Abstract: | We present in this work a simple quantum well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a metalorganic vapour phase epitaxy system. Comparisons between two different commercially available purifiers are based on the analysis of low-temperature photoluminescence emission spectra from thick QWs, grown on GaAs substrates misoriented slightly from (1 0 0). Neutral excitons emitted from these structures show extremely narrow linewidths, comparable with those that can be obtained by molecular beam epitaxy in an ultra-high vacuum environment, suggesting that purifications well below the 1 ppb level are needed to achieve high quality quantum well growth. |
| |
Keywords: | A1 Purifiers A3 Metalorganic vapour phase epitaxy A3 Quantum wells B2 Arsine B2 Semiconducting III&ndash V materials |
本文献已被 ScienceDirect 等数据库收录! |
|