Transport properties of nanoperforated Nb thin films |
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| Authors: | M. Trezza C. Cirillo S.L. Prischepa C. Attanasio |
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| Affiliation: | 1. Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno, Baronissi (Sa) I-84081, Italy;2. State University of Informatics and RadioElectronics, P. Brovka Street 6, Minsk 220013, Belarus |
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| Abstract: | ![]()
Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering, inherited from the Si substrates their structure, made of holes of 10 nm diameter and of 20 and 40 nm spacing, which provide an artificial pinning lattice. Commensurability effects between the Abrikosov vortex lattice and the artificial array of holes were investigated by transport measurements. |
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| Keywords: | Vortex lattices Flux pinning Porous silicon |
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