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Formation of Ge-diffusion-suppressed GaAs layers and InAs quantum dots on Ge/Si substrates |
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| Authors: | Kenichi Kawaguchi Hiroji Ebe Mitsuru Ekawa Akio Sugama Yasuhiko Arakawa |
| Institution: | 1. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan;2. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;3. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;4. Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan |
| Abstract: | Crystal growth of GaAs layers and InAs quantum dots (QDs) on the GaAs layers was investigated on Ge/Si substrates using ultrahigh vacuum chemical vapor deposition. Ga-rich GaAs with anti-site Ga atoms grown at a low V/III ratio was found to suppress the diffusion of Ge into GaAs. S-K mode QD formation was observed on GaAs layers grown on Ge/Si substrates with Ga-rich GaAs initial layers, and improved photoluminescence from 1.3 μm-emitting InAs QDs was demonstrated. |
| Keywords: | A3 Low pressure metalorganic vapor-phase epitaxy B1 Nanomaterials B2 Semiconducting III-V materials |
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