Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy |
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Authors: | Daisuke Iida Kenta Tamura Motoaki Iwaya Satoshi Kamiyama Hiroshi Amano Isamu Akasaki |
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Institution: | 1. Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan;2. Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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Abstract: | The electrical and optical properties of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy were systematically investigated. The photoluminescence spectra of Mg-doped a- and c-plane GaN films exhibit strong emissions related to deep donors when Mg doping concentrations are above 1×1020 cm−3 and 5×1019 cm−3, respectively. The electrical properties also indicate the existence of compensating donors because the hole concentration decreases at such high Mg doping concentrations. In addition, we estimated the ND/NA compensation ratio of a- and c-plane GaN by variable-temperature Hall effect measurement. The obtained results indicate that the compensation effect of the Mg-doped a-plane GaN films is lower than that of the Mg-doped c-plane GaN films. |
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Keywords: | A1 Crystal structure A1 Doping B1 Nitrides B2 Semiconducting gallium compounds |
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