GaP:Mg layers grown on GaN by MOCVD |
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Authors: | Shuti Li Jun Su Guanghan Fan Chao Liu Jianxing Cao Yian Yin |
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Institution: | 1. Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, PR China;2. Key Laboratory of Electroluminescent Devices of Department of Education of Guangdong Province, 510631, PR China |
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Abstract: | We have investigated the growth of magnesium-doped GaP (GaP:Mg) layers on GaN by metalorganic chemical vapor deposition. The hole carrier concentration increased linearly from 0.8×1018 to 4.2×1018 cm−3 as the Bis(cyclopentadienyl) magnesium (Cp2Mg) mole flow rate increased from 1.2×10−7 to 3.6×10−7 mol/min. However, the hole carrier concentration decreased when the CP2Mg mole flow rate was further increased. The double crystal X-ray diffraction (DCXRD) rocking curves showed that the GaP:Mg layers were single crystalline at low CP2Mg molar flow. However, the GaP:Mg layers became polycrystalline if the CP2Mg molar flow was too high. The decrease in hole carrier concentration at high CP2Mg molar flow was due to crystal quality deterioration of the GaP layer, which also resulted in the low hole mobility of the GaP:Mg layer. |
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Keywords: | A1 Atomic force microscopy A3 Metalorganic chemical vapor deposition B1 Nitrides B2 Semiconducting III-V materials |
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