Effect of electron beam on structural,linear and nonlinear properties of nanostructured Fluorine doped ZnO thin films |
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| Institution: | 1. Nonlinear Optics Research Laboratory, Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576104, Karnataka, India;2. Department of Physics, School of Engineering and Technology, Jain University, Jakkasandra Post, Bengaluru 562112, Karnataka, India;3. Institute of Optoelectronics and Measuring Systems, Faculty of Electrical Engineering, Czestochowa University of Technology, Armii Krajowej 17, PL-42-201 Czestochowa, Poland;4. University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, P. B. 1014, Rabat, Morocco;5. Mircortron Centre, Department of Physics, Mangalore University, Mangalore, Karnataka 574199, India;6. Department of Physics, NMAM Institute of Technology, Nitte 574110, India;1. School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004, China;2. School of Science, East China Jiaotong University, Nanchang 330013, China;1. School of Materials Science and Engineering, Shandong Jianzhu University, 250101 Jinan, PR China;2. Science and Technology on Power Beam Processes Laboratory, Beijing Key Laboratory of High Power Beam Additive Manufacturing Technology and Equipment, Aeronautical Key Laboratory for Additive Manufacturing Technologies, AVIC Manufacturing Technology Institute, 100024 Beijing, PR China |
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| Abstract: | Electron beam induced effects on Fluorine doped ZnO thin films (FZO) grown by chemical spray pyrolysis deposition technique were studied. The samples were exposed to 8 MeV electron beam at different dose rate ranging from 1 kGy to 4 kGy. All films exhibit a polycrystalline nature which shows an increase in crystallanity with irradiation dosages. The electron beam irradiation effectively controls the films surface morphology and its linear optical characteristics. Z-Scan technique was employed to evaluate the sign and magnitude of nonlinear refractive index and nonlinear absorption coefficient using a continuous wave laser at 632.8 nm as light source. Enhancement in the third order nonlinear optical properties was were noted due to electron beam irradiation. Tailoring the physical and NLO properties by electron beam, the FZO thin films becomes a promising candidate for various optoelectronic applications such as phase change memory devices, optical pulse compression, optical switching and laser pulse narrowing. |
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| Keywords: | FZO thin films Electron beam NLO Z-scan |
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