纳米β-FeSi2/a-Si多层膜室温光致发光分析

采用射频磁控溅射的方法，在Si（100）基片上制备了纳米β-FeSi₂/Si多层结构，利用X射线衍射、透射电子显微镜、光致发光光谱等表征技术，研究了β-FeSi₂/Si多层结构的结构、成分和光致发光特性.研究结果表明：利用磁控溅射法得到的Fe/Si多层膜，室温下能够检测到β-FeSi₂的1.53 μm处光致发光信号；未退火时多层膜是（非晶的FeSi₂+β-FeSi₂颗粒）/非晶Si结构，退火后则是 关键词： 2')" href="#">β-FeSi₂ 磁控溅射 XRD 光致发光光谱

Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films

Nano-β-FeSi₂/a-Si layered structure was successfully deposited on Si （001） substrates using radio-frequency magnetron sputtering method. X-ray diffraction, transmission electron microscopy and photoluminescence （PL） analyses were used to characterise the structure, composition and photoluminescence properties of β-FeSi₂/Si multilayer films. The results show that the peak at wavelength of 1.53 μm is observed from Fe/Si multilayer films by PL at room temperature. Without annealing, The films are of （amorphous FeSi₂+ Nano-β-FeSi₂ particles） / amorphous Si structure, whereas after annealing, the films are of β-FeSi₂ particles/（crystal Si + amorphous Si） structure. Furthermore, the same PL intensity between as-grown and annealed samples indicates that identical luminescence property can be excited from amorphous FeSi₂+β-FeSi₂ particles and β-FeSi₂ particles. In this experiment, the peak at wavelength of 1.53 μm is also a further indication of the semiconducting properties of amorphous FeSi₂.