Submicrometer-MOS capacitor with ultra high capacitance biased by Au nanoelectrodes |
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Authors: | A Kisner M R Aguiar A F Vaz A Rojas F A Cavarsan J A Diniz and L T Kubota |
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Institution: | (1) Forschungszentrum Juelich, IBN-2, Juelich, 52428, Germany;(2) Institute of Chemistry, UNICAMP, P.O. Box 6154, Campinas, Brazil;(3) Center of Semiconductors Components, UNICAMP, P.O. Box 6061, Campinas, Brazil |
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Abstract: | The ultimate limits of size of the current metal-oxide-semiconductor capacitors can be overcome by preparation of three-dimensional
devices that can vertically be biased using one-dimensional metal nanostructures. Here, we present a general and efficient
approach to the assembly and integration of Au nanocrystals into functional nanoelectrodes of three-dimensional submicrometer-MOS
(0.35 μm2) capacitors, presenting an ultra high capacitance (24±1 pF). The Au nanocrystals were directly produced into a nanoporous
template of anodized aluminum oxide that was evaluated, and the electrical characterization of this device corroborates the
formation of the MOS capacitor. Flat band voltage is independent of sweep voltage range, and negligible hysteresis of capacitance-voltage
curves is observed when sweep voltage ranges from positive to negative and turned again to positive bias. In addition, experimental
results match theoretical analysis and indicate the presence of free surface charges stored in the Au nanostructures. The
demonstrated ability to control the assembling of the nanocrystals and the results of electrical characterization indicate
that the embedded Au nanoelectrodes have a high potential for memory applications based on three-dimensional devices. |
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Keywords: | PACS" target="_blank">PACS 81 07 Lk 81 16 Be |
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