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Two dimensional band-gap restricted diffusion of negatively charged excitons in rare gas solids
Authors:M. A. Huels   P. Rowntree   L. Parenteau  L. Sanche
Affiliation:

a Department of Nuclear Medicine and Radiobiology, Faculty of Medicine, University of Sherbrooke, Sherbrooke, Québec, Canada J1H 5N4

b Department of Chemistry, University of Sherbrooke, Sherbrooke, Québec, Canada J1H 5N4

Abstract:We present measurements of electron stimulated desorption (ESD) yields of D, obtained from sub-monolayer amounts of C2D6 physisorbed on rare gas substrates; the latter consisting of alternating layers of Xe and Kr adsorbed at 20 K on Pt. Negatively charged excitons (NCE), for example, Xe* or Kr*, which are produced by electron impact, may couple to dissociative anion states of C2D6, resulting in sharp resonance enhancements in the D ESD yields. Our measurements suggest that resonant diffusion of the Xe NCEs can be restricted to a single Xe layer, by placing a Kr multilayer spacer between the Xe and the metal substrate. This is attributed to the 1.85 eV insulating band-gap difference at the Xe---Kr interface.
Keywords:Alkanes   Amorphous surfaces   Diffusion and migration   Electron stimulated desorption   Insulating films   Noble gases   Surface diffusion
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