| F掺杂的BN纳米管及电导特性 |
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| 引用本文： | 黄阳,岳双林,顾长志,C.C.Tang,Y.Bando,F.F.Xu,D.Golberg.F掺杂的BN纳米管及电导特性[J].物理,2005,34(11):791-792. |
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| 作者姓名： | 黄阳 岳双林 顾长志 C.C.Tang Y.Bando F.F.Xu D.Golberg |
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| 作者单位： | 1. 北京凝聚态物理国家实验室,中国科学院物理研究所,北京,100080
2. Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1 - 1, Tsukuba , Ibaraki 305 - 0044, Japan |
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| 基金项目： | 国家重点基础研究发展计划（2002CB613500）、中国科学院＂百人计划＂和国家纳米科学中心资助项目 |
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| 摘 要： | 利用一种新颖的催化生长方法,在生长BN纳米管的过程中直接引入F原子,获得了均匀F掺杂的BN纳米管.高分辨透射电子显微镜研究表明,构成BN纳米管的六元环由于F掺杂而被严重扭曲,纳米管壁由一些高度卷曲的连续片层构成.电学性质测量表明,相对于无掺杂的BN纳米管而言,F掺杂BN纳米管的电导显著增加.
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| 关 键 词： | BN纳米管 F掺杂 化学气相沉积 电导 |
| 收稿时间： | 2005-05-24 |
| 修稿时间： | 2005-05-242005-07-18 |
Fluorination and electrical conductivity of BN nanotubes |
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| HUANG Yang,YUE Shuang-Lin,GU Chang-Zhi,C.C.Tang,Y.Bando,F.F.Xu,D.Golberg.Fluorination and electrical conductivity of BN nanotubes[J].Physics,2005,34(11):791-792. |
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| Authors: | HUANG Yang YUE Shuang-Lin GU Chang-Zhi CCTang YBando FFXu DGolberg |
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| Institution: | 1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;2.Advanced Materials Laboratory, National Institute for Materials Science, Namiki 1 - 1, Tsukuba, Ibaraki 305 - 0044, Japan |
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| Abstract: | Barium nitride nanotubes uniformly doped with fluorine have been grown by a novel catalytic method during which the growth of the nanotubes and doping occur at the same time. Examination by high - resolution transmission electron microscopy indicates that the six-numbered BN atomic rings within the BN sheets are strongly destroyed due to the fluoridation and the walls of the nanotubes are composed of highly curled continuous BN sheets. Compared to pure BN nanotubes, the conductivity of fluoridated nanotubes is significantly enhanced, resulting in a typical heavily-doped semiconductor. |
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| Keywords: | BN nanotubes F doping chemical vapor deposition electrical conductivity |
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