首页 | 本学科首页   官方微博 | 高级检索  
     检索      

TOPCon太阳电池发射极Al2O3/SiNx与SiO2/Al2O3/SiNx叠层膜钝化性能的比较
引用本文:杨露,刘大伟,张婷,魏凯峰,石慧君.TOPCon太阳电池发射极Al2O3/SiNx与SiO2/Al2O3/SiNx叠层膜钝化性能的比较[J].人工晶体学报,2022,51(12):2090-2095.
作者姓名:杨露  刘大伟  张婷  魏凯峰  石慧君
作者单位:青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710000
摘    要:本文对TOPCon电池发射结的叠层钝化膜进行了研究,对比了3种不同叠层钝化膜(SiO2/SiNx、Al2O3(1.5 nm)/SiNx、SiO2/Al2O3(1.5 nm)/SiNx)的钝化性能。结果表明:Al2O3(1.5 nm)/SiNx的钝化性能优于SiO2/SiNx,SiO2/Al2O3(1.5 nm)/SiNx的钝化水平最佳,隐开路电压均值可达到705 mV。基于Al2O3/SiNx叠层膜研究了Al2O3厚度(1.5 nm、3 nm和5 nm)对钝化性能和电池转换效率的影响。当Al2O3厚度由1.5 nm增加到3 nm时,钝化性能得到明显提升,隐开路电压均值提高了20 mV,达到707 mV,对应电池的光电转换效率升高了0.23个百分点,与SiO2/Al2O3(1.5 nm)/SiNx叠层膜电池的转换效率持平。然而,当Al2O3厚度继续增加至5 nm时,隐开路电压均值保持不变。因此可以使用Al2O3(3 nm)/SiNx叠层膜代替SiO2/Al2O3(1.5 nm)/SiNx叠层膜,不仅简化了电池的工艺步骤,而且降低了生产成本。

关 键 词:TOPCon电池  表面钝化  三氧化二铝  Al2O3/SiNx叠层钝化膜  钝化性能  隐开路电压  
收稿时间:2022-07-05

Comparative Study on Passivation Performance of Al2O3/SiNx and SiO2/Al2O3/SiNx Stacked Films for Emitter of TOPCon Solar Cells
YANG Lu,LIU Dawei,ZHANG Ting,WEI Kaifeng,SHI Huijun.Comparative Study on Passivation Performance of Al2O3/SiNx and SiO2/Al2O3/SiNx Stacked Films for Emitter of TOPCon Solar Cells[J].Journal of Synthetic Crystals,2022,51(12):2090-2095.
Authors:YANG Lu  LIU Dawei  ZHANG Ting  WEI Kaifeng  SHI Huijun
Institution:Xi’an Solar Power Branch of Qinghai Huanghe Hydropower Development Co., Ltd., Xi’an 710000, China
Abstract:The stacked passivation films for emitter of TOPCon solar cells were investigated in the paper. The passivation performance of three different stacked films (SiO2/SiNx, Al2O3(1.5 nm)/SiNx, SiO2/Al2O3(1.5 nm)/SiNx) were compared. The results show that the Al2O3 (1.5 nm)/SiNx films exhibit better passivation performance than that of the SiO2/SiNx films, and the SiO2/Al2O3(1.5 nm)/SiNx films perform the best, with an implied open circuit voltage of 705 mV. Based on the Al2O3/SiNx stacked passivation films, the effect of Al2O3 thickness (1.5 nm, 3 nm and 5 nm) on the passivation performance and photoelectric conversion efficiency of cells were investigated. When the thickness of Al2O3 increases from 1.5 nm to 3 nm, the passivation performance is significantly improved, the mean value of the implied open circuit voltage increases by 20 mV to 707 mV, and the conversion efficiency of the corresponding cells increases by 0.23 percentage point, which is comparable to that of the SiO2/Al2O3(1.5 nm)/SiNx stacked films cells. However, when the thickness of Al2O3 continues to increase to 5 nm, the mean value of the implied open circuit voltage remains unchanged. Therefore, Al2O3(3 nm)/SiNx stacked films can be used to replace the SiO2/Al2O3(1.5 nm)/SiNx stacked films, which not only simplifies the process flow of the solar cells, but also reduces the production cost.
Keywords:TOPCon solar cell  surface passivation  aluminum oxide  Al2O3/SiNx stacked passivation film  passivation performance  implied open circuit voltage  
点击此处可从《人工晶体学报》浏览原始摘要信息
点击此处可从《人工晶体学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号