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Evidence of formation of tetravacancies in uniformly oxygen irradiated n-type silicon
Authors:S.K. Chaudhuri  K. GoswamiS.S. Ghugre  D. Das
Affiliation:a UGC-DAE Consortium for Scientific Research, Kolkata Centre, III/LB—8, Salt Lake, Kolkata-700098, India
b Department of Physics, Jadavpur University, 188 Raja S. C. Mallik Road, Kolkata-700032, India
Abstract:
High purity n-type silicon single crystal with resistivity in the order of 4000 Ω cm has been irradiated with high-energy oxygen ions at room temperature up to a fluence of 5E15 ions/cm2. The energy of the beam was varied from 3 to 140 MeV using a rotating degrader to achieve a depthwise near-uniform implantation profile. Radiation induced defects and their dynamics have been studied using positron annihilation spectroscopy along with isochronal annealing up to 700 °C in steps of 50 °C for 30 min. After annealing the sample at 200 °C for 30 min, formation of silicon tetravacancies has been noticed. The formation of the tetravacancies was found to be due to agglomeration of divacancies present in the irradiated sample. An experimentally obtained positron lifetime value of 338±10 ps has been reported for silicon tetravacancies, which has a very close agreement with the value obtained from recent theoretical calculations. The tetravacancies were found to dissociate into trivacancy clusters upon further annealing. The trivacancies thus obtained were observed to agglomerate beyond 400 °C to form larger defect clusters. Finally, all the defects were found to anneal out after annealing the sample at 650 °C.
Keywords:Positron annihilation spectroscopy   Silicon   Vacancy type defects   Radiation damage
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