Simulation of silicon diffusion in GaAs |
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Authors: | AM Saad OI Velichko |
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Institution: | a Al-Balga Applied University, P.O.Box 4545 - Amman - 11953 - Tela El Ali - Jordan b Department of Physics, Belarusian State University of Informatics and Radioelectronics, 6, P. Brovki Street, Minsk 220013, Belarus |
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Abstract: | The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs. |
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Keywords: | Thermal diffusion Gallium arsenide Silicon Vacancy |
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