Effect of the external electric field on the kinetics of recombination of photoexcited carriers in a ZnSe/BeTe type II heterostructure |
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Authors: | E V Filatov A A Maksimov I I Tartakovskii D R Yakovlev A Waag |
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Institution: | 1.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow region,Russia;2.Experimentelle Physik II,Technische Universit?t Dortmund,Dortmund,Germany;3.Ioffe Physical-Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;4.Institut für Halbleitertechnik,Technische Universit?t Braunschweig,Braunschweig,Germany |
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Abstract: | The kinetics of the radiative recombination of photoexcited electrons and holes for a spatially direct transition in a ZnSe/BeTe
type II heterostructure in an external electric field has been analyzed. A strong decrease (more than two orders of magnitude)
in the photoluminescence intensity, as well as a decrease in the duration of the relaxation of the direct transition, is observed
when the electric field is applied. The energy levels and wavefunctions of electrons and holes in the ZnSe/BeTe heterostructure
subjected to the electric field have been numerically calculated. It has been shown that the observed decrease in the photoluminescence
intensity and duration of the relaxation of the direct transition is due to both an increase in the radiative recombination
time and an increase in the rate of escape of photoexcited holes from the above-barrier level in the ZnSe layer to the BeTe
layer. |
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