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Effects of growth conditions on the size and density of self-assembled InAlAs/AlGaAs quantum dots grown on GaAs by molecular beam epitaxy |
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| Authors: | X.M. Lu Y. Izumi M. Koyama Y. Nakata S. Adachi S. Muto |
| Affiliation: | a Department of applied physics, Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan;b Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan |
| Abstract: | |
| Keywords: | A1. Reflection high-energy electron diffraction A1. Atomic force microscopy A3. Quantum dots A3. Molecular beam epitaxy B2. Semiconducting III– V materials |
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