Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapour Deposition

CNx thin films were prepared using low pressure plasma enhanced chemical vapour deposition,and then bombarded by low-energy N2^ .The compositions before and after N2^ bombardment were compared using x-ray photoelectron spectroscopy.The electron field emission characteristics of CNx thin films before and after N2^ bombardment were studied under the pressure of 10^-6pa.For the samples,the turn-on emission field decreased from 2.5V/μm to 1.2V/μm while the stable current density increased from 0.5mA/cm^2 to a value larger than 1mA/cm^2 before and after the bombardment.Our results illustrate that the field emission characteristics were improved after the bombardment of N2^ .