Energy band modulation of GaAs/Al0.26Ga0.74As quantum well in 3D self-assembled nanomembranes |
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| Authors: | Fei Zhang GaoShan Huang XiaoFei Nie Xin Cao Zhe Ma Fei Ding ZengFeng Di HongLou Zhen YongFeng Mei |
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| Affiliation: | 1. Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, People''s Republic of China;2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People''s Republic of China;3. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstrasse 2, 30167, Hannover, Germany;4. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People''s Republic of China |
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| Abstract: | ![]()
In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al0.26Ga0.74As quantum wells (QWs). Photoluminescence (PL) characterizations demonstrate that the self-assembled structures have different optical transition properties and the modulation of the energy band is thus realized. Detailed spectral analyses disclose that the small strain change in structures with different curvatures cannot cause remarkable change in energy bands in Al0.26Ga0.74As layer. On the other hand, the optical transitions of GaAs QW layer is influenced by the strain evolution in term of light emission intensity. We also find the first order Stark effect in rolled-up nanomembrane with diameter of 150 μm, which is closely connected with the coupling effect between the deformation potential and the piezoelectric potential. Our work may pave a way for the fabrication of high performance rolled-QW infrared photo-detectors. |
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| Keywords: | Corresponding authors. Quantum well Nanomembrane Energy band Strain Stark effect |
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