Properties of the defect mode in one-dimensional ferroelectric Si/C60 photonic crystals |
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| Authors: | Chunxia Li Suihu Dang Peide Han |
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| Institution: | 1. Interface Science and Engineering in Advanced Materials of Taiyuan University of Technology, Ministry of Education, College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China;2. Department of Physics and Electronic and Information Engineering, Yangtze Normal University, Chongqing 408003, China |
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| Abstract: | In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO3) into Si/C60 one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80 nm and a defect mode appears at a central wavelength of 680 nm when a 150 nm LiNbO3 layer is inserted into the Si/C60 PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2 nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1 KV. |
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| Keywords: | Ferroelectric Dielectric function Transfer matrix method Photonic crystals |
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