Study on the electronic structure and optical properties of different Al constituent Ga1−xAlxAs |
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Authors: | Xiaohua Yu Yujie Du Bengkang Chang Zhonghao Ge Honggang Wang |
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Affiliation: | 1. Institute of Electronic Engineering and Opto-Electric Technology, NJUST, Nanjing 210094, China;2. Department of Physics, Institute of Bingzhou, Bingzhou, Shandong 256603, China;3. School of Information and Electrical Engineering, Ludong University, Yantai 264025, China |
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Abstract: | ![]() Using quantum mechanics GASTEP software package based on the first principle density function theory, the electronic structure and optical properties of Ga1−xAlxAs at different Al constituent are calculated. Result shows that with the increase of Al constituent, the band gap of Ga1−xAlxAs increases and varies from direct band gap to indirect band gap; the absorption band edge and the absorption peak move to high-energy side; the static reflectivity decreases. With the increasing of the incident photon energy, Ga1−xAlxAs shows metal reflective properties in certain energy range. With the increasing of Al constituent, static dielectric constant decreases and the intersection of dielectric function and the x-axis move towards high-energy side; the peak of energy loss function move to low-energy side and the peak value reduces. |
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Keywords: | Ga1&minus xAlxAs Al constituent Electronic structure Optical properties |
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