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| A computer simulation of nucleation and growth of thin films | |
| 作者姓名： | ZHENG Xiaoping ZHANG Peifeng HE Deyan LIU Jun& MA Jiantai . Key Laboratory of Opto-Electronic Technology and Intelligent Control Ministry of Education Lanzhou Jiaotong University Lanzhou China . School of Physical Science and Technology Lanzhou University Lanzhou China . School of Chemistry and Chemistry Engineering Lanzhou University Lanzhou China |
| 作者单位： | ZHENG Xiaoping1，ZHANG Peifeng2，HE Deyan2，LIU Jun2& MA Jiantai3 1. Key Laboratory of Opto-Electronic Technology and Intelligent Control，Ministry of Education，Lanzhou Jiaotong University，Lanzhou 730070，China; 2. School of Physical Science and Technology，Lanzhou University，Lanzhou 730000，China; 3. School of Chemistry and Chemistry Engineering，Lanzhou University，Lanzhou 730000，China |
| 基金项目： | 兰州交通大学校科研和教改项目 |
| 摘 要： | ~~A computer simulation of nucleation and growth of thin films~~ |
A computer simulation of nucleation and growth of thin films |
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| ZHENG Xiaoping,ZHANG Peifeng,HE Deyan,LIU Jun& MA Jiantai . Key Laboratory of Opto-Electronic Technology and Intelligent Control,Ministry of Education,Lanzhou Jiaotong University,Lanzhou ,China, . School of Physical Science and Technology,Lanzhou University,Lanzhou ,China, . School of Chemistry and Chemistry Engineering,Lanzhou University,Lanzhou ,China.A computer simulation of nucleation and growth of thin films[J].Science in China(Physics Astronomy),2004,47(4):442-451. | |
| Authors: | ZHENG Xiaoping ZHANG Peifeng HE Deyan LIU Jun MA JianTai |
| Institution: | 1. Key Laboratory of Opto-Electronic Technology and Intelligent Control, Ministry of Education, Lanzhou Jiaotong University, Lanzhou 730070, China 2. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China 3. School of Chemistry and Chemistry Engineering, Lanzhou University, Lanzhou 730000, China |
| Abstract: | A three-dimensional kinetic Monte Carlo technique has been developed for simulating the nucleation and growth of thin films. This model involves incident atom attachment, surface diffusion of the atoms on the growing surface and atom detachment from the growing surface. It takes some new effects into account, such as a significant improvement in calculation of activation energy for the atom diffusion, which renders the model more reasonable. In addition three optimum temperatures and the consistency of their dependence on deposition rate have been found out; the dependence of the surface roughness and relative density on the deposition rate has been discussed; and the approximation of freezing neighbour atoms and periodic boundary conditions has been applied. |
| Keywords: | Monte Carlo thin film nucleation surface roughness relative density |
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