Molecular engineering of CxNy: Topologies,electronic structures and multidisciplinary applications |
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| Institution: | 1. School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai, Shandong, China;2. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong, China;3. School of Physics and Electrical Engineering, Kashgar University, Kashi 844006, China;1. Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China;1. Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China;2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300354, China;1. Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China;2. State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China;3. Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, 100094, PR China;4. College of Physics and Materials Science, Henan Normal University, Xinxiang, Henan, 453007, China;5. School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan, 450044, China |
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| Abstract: | As a class of metal-free two-dimensional (2D) semiconductor materials, polymeric carbon nitrides have attracted wide attention recently due to its facile regulation of the molecular and electronic structures, availability in abundance and high stability. According to the different ratios of C and N atoms in the framework, a series of CxNy materials have been successfully synthesized by virtue of various precursors, which further triggers extensive investigations of broad applications ranging from sustainable photocatalytic reactions and highly sensitive optoelectronic biosensing. In view of topological structures on their electronic structures and material properties, the as-reported CxNy could be generally classified into two main categories with three- or six-bond-extending frameworks. Owing to the effective n→π* transition in most CxNy materials, the relative energy level of the lone-pair electrons on N atoms is high, which thus endows the materials with the capability of visible light absorption. Meanwhile, the different repeating units, bridging groups and defect sites of these two kinds of CxNy allow them to effectively drive a diverse of promising applications that require specific electronic, interfacial and geometric properties. This review paper aims to summarize the recent progress in topological structure design and the relevant electronic band structures and striking properties of CxNy materials. In the final part, we also discuss the existing challenges of CxNy and outlook the prospect possibilities. |
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| Keywords: | Polymeric carbon nitrides Topology Electronic structure 2D semiconductor |
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