Self-aligned metal-SiO2-InP based MISFETS having modulation doped channels |
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Authors: | F C Jain S K Islam and M Gokhale |
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Institution: | (1) Electrical and Systems Engineering, University of Connecticut, U-157, 260 Glenbrook Road, 06269-3157 Storrs, Connecticut |
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Abstract: | A novel metal-SiO2-InP MISFET (metal-insulator-semiconductor field effect transistor) structure is proposed. This device incorporates a modulation doped channel and the self-aligned gate feature of Si MOSFETs. The modulation doping provides very high electron mobility and the self-alignment of gate, source and drain provides high packing density. Analytical results on current-voltage and transconductance characteristics are presented. Significant enhancement in high frequency performance over conventional MISFETs, employing SiO2 as an insulator, is reported. |
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