| 用MPCVD法制备氮化碳薄膜 |
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| 引用本文： | 顾有松,张永平,常香荣,田中卓,时东霞,张秀芳,袁磊.用MPCVD法制备氮化碳薄膜[J].人工晶体学报,2000,29(3):234-239. |
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| 作者姓名： | 顾有松 张永平 常香荣 田中卓 时东霞 张秀芳 袁磊 |
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| 作者单位： | 北京科技大学材料物理系,北京100083;中国科学院物理研究所,北京真空物理实验室,北京100080 |
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| 摘 要： | 用微波等离子体化学气相沉积法(MPCVD)在硅片和铂基片上生长了氮化碳薄膜.扫描电镜(SEM)观察显示,在硅片上形成了多晶的膜;EDX能谱分析表明膜中的碳氮比在1.0～2.0之间;X射线衍射谱表明在硅片和铂片上生长的氮化碳薄膜是由α-C3N4和β-C3N4晶相组成的;XPS峰形分析表明,薄膜中的C、N主要是以共价单键结合的;红外谱中也出现了β-C3N4的特征谱线.因此有足够的证据表明,晶态的氮化碳薄膜已经合成.
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| 关 键 词： | C3N4薄膜 微波等离子体化学气相沉积 表征 X射线衍射 |
Carbon Nitride Films Deposited by MPCVD |
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| GU You-song,ZHANG Yong-ping,CHANG Xiang-rong,TIAN Zhong-zhuo,SHI Dong-xia,ZHANG Xiu-fang,YUAN Lei.Carbon Nitride Films Deposited by MPCVD[J].Journal of Synthetic Crystals,2000,29(3):234-239. |
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| Authors: | GU You-song ZHANG Yong-ping CHANG Xiang-rong TIAN Zhong-zhuo SHI Dong-xia ZHANG Xiu-fang YUAN Lei |
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| Abstract: | Carbon nitride films have been deposited on Si and Pt substances by microwave plasma chemical vapor deposition (MPCVD). For films deposited on Si substrates, SEM observations showed that polycrystalline films were formed. The nitrogen to carbon ratio was in the range of 1.0-2.0. XRD experiments with films on both Si and Pt substrate showed that the films consisted of crystal phases of α-and β-C3N4. Detailed XPS peak profile analysis showed that the carbon and nitrogen atoms in the films were mainly bound together in single bond covalent C-N bonds. IR spectra also showed characteristic peaks of β-C3N4. Strong evidence shows that crystalline carbon nitride films have been synthesized. |
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| Keywords: | C3N4 film MPCVD characterization X-ray diffraction |
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