| 中子辐照高掺硅砷化镓的光致发光研究 |
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| 引用本文： | 林昭.中子辐照高掺硅砷化镓的光致发光研究[J].发光学报,1985,6(1):7-12. |
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| 作者姓名： | 林昭 |
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| 作者单位： | 1. 北京大学物理系;2. 冶金部有色金属研究总院 |
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| 摘 要： | 研究了高掺硅的n型GaAs在中子辐照前后和150℃-500℃等时热退火以后的光致发光光谱。观察到在中子辐照后积分发光强度降低为辐照前的1/36。在退火温度超过250℃时,积分发光强度显著增长,当退火温度达400℃以上时,在带边峰的低能侧出现能量为1.35eV、1.30eV和1.26eV的发光峰。假设250℃退火阶段对应于较大的空位团分解为较小的空位团,400℃退火阶段对应于较小的空位团分解出VGa,可以较好地解释实验现象。
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| 收稿时间： | 1984-06-12 |
A PHOTOLUMINESCENCE STUDY OF HEAVILY Si-DOPED GaAs IRRADIATED WITH NEUTRONS |
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| Lin Zhaohui,Zhang Lizhu,Chen Kun,Xu Huiying,Zhang Borui,Qin Guogang,Yin Qingmin.A PHOTOLUMINESCENCE STUDY OF HEAVILY Si-DOPED GaAs IRRADIATED WITH NEUTRONS[J].Chinese Journal of Luminescence,1985,6(1):7-12. |
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| Authors: | Lin Zhaohui Zhang Lizhu Chen Kun Xu Huiying Zhang Borui Qin Guogang Yin Qingmin |
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| Institution: | 1. Department of Physics, Peking University;2. General Research Institute of Non-Ferrous Metals |
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| Abstract: | Transmutation doping is a well established technique for obtaining low doping concentration in silicon.Similarly, in GaAs,this technique can be very useful in order to introduce low doping without compensation.However, these is a lack of data concerning the damage introduced by thermal neutron irradiation and the effect of annealing on the defects appearing during the irradiation.In this work we have studied the defects appearing during the neutron irradiation and the effect of annealing by means of photoluminescence at 77K.The starting samples were (111) oriented GaAs slices doped with Si and grown by the horizontal-zone method. Some parameters of the starting sample are given in the table. |
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