Pseudo-epitaxial C60 films prepared by a hot-wall method |
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| Authors: | J E Fischer E Werwa P A Heiney |
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| Institution: | (1) Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut St., 19104-6272 Philadelphia, PA, USA;(2) Physics Department, University of Pennsylvania, 19104 Philadelphia, PA, USA;(3) Present address: Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, 02139 Cambridge, MA, USA |
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| Abstract: | We have used both reflection-geometry and grazing-incidence-geometry X-ray scattering to study thin films of C60 evaporated onto mica substrates via a hot-wall technique. The growth mode yields close-packed C60 planes, which are parallel to the substrate surface and which exhibit out-of-plane correlation lengths of 850 Å. In the film plane the C60 is at best pseudo-epitaxial, with a 0.9° distribution of crystallite orientations, a 450 Å in-plane correlation length, and a 3.7% lattice mismatch, better than obtained by other thin film techniques but far from the accepted definition of single crystal thin film epitaxy. |
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| Keywords: | 68 55 – a 81 15 Ef |
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