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Coevaporation phosphorus doping in Si grown by molecular beam epitaxy |
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| Authors: | R. A. A. Kubiak G. Patel W. Y. Leong R. Houghton E. H. C. Parker |
| Affiliation: | (1) Solid State MBE Research Group, Sir John Cass Faculty of Physical Sciences and Technology, City of London Polytechnic, 31 Jewry Street, EC3N 2EY London, UK;(2) Present address: The Birches Industrial Estate, VG Semicon Ltd., Imberhorne Lane, RH19 1XZ East Grinstead, Sussex, UK |
| Abstract: | Phosphorus-doped Si epilayers with bulk-like mobilities were grown by molecular beam epitaxy (Si-MBE) by coevaporation of phosphorus from a tin phosphide source. The behaviour of P doping as a function of growth parameters and of  potential enhanced doping indicates a non-unity, almost growth-temperature independent incorporation efficiency with negligible surface segregation -a unique combination among coevaporated dopants in Si-MBE. |
| Keywords: | 73.60.Fw 81.15Ef 68.55+b |
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