Computation of etched track profiles in CR-39 and comparison with experimental results for light ions of different kinds and energies

Computation of etched track profiles needs the knowledge of the variable track etch rates along the ion trajectories. Using the depth-dependent track etch rates experimentally determined for perpendicularly incident protons, deuterons and alpha particles as well as ⁷Li, ¹¹B, ¹²C, ¹⁴N and ¹⁶O ions of different energies simulations of the track development were performed. Two models of track etching were applied for that purpose recently published in literature. Although the models are based on the same physical fundamentals the results are slightly different. The reasons of the discrepancies were found by analysing the algorithms in detail. Comparison of the calculated track profiles with those determined experimentally from longitudinal sections of the etch pits showed good agreement for non-overetched as well as overetched tracks. The consistency of the whole experimental data set was checked by analysing the correlation of the track etch rates with geometric track parameters for all kinds of ions and etching times covered by the experiments.