Reversible chemical switches of functionalized nitrogen-doped graphene field-effect transistors |
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Authors: | Rong Rong Song Liu |
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Institution: | Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China |
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Abstract: | Nitrogen doping is a promising way to modulate the electrical properties of graphene to realize graphene-based electronics and promise fascinating properties and applications. Herein, we report a method to noncovalently assembly titanium(IV) bis(ammoniumlactato) dihydroxide (Ti complex) on nitrogen-doped graphene to create a reliable hybrids which can be used as a reversible chemical induced switching. As the adsorption and desorption of Ti complex in sequential treatments, the conductance of the nitrogen-doped graphene transistors was finely modulated. Control experiments with pristine graphene clearly demonstrated the important effort of the nitrogen in this chemical sensor. Under optimized conditions, nitrogen-doped graphene transistors open up new ways to develop multifunctional devices with high sensitivity. |
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Keywords: | Field-effect transistors Nitrogen-doped graphene Doping effect Ti complex Reversible switch |
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