| 低工作电压聚噻吩薄膜晶体管 |
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| 引用本文： | 刘玉荣,陈伟,廖荣.低工作电压聚噻吩薄膜晶体管[J].物理学报,2010,59(11):8088-8092. |
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| 作者姓名： | 刘玉荣 陈伟 廖荣 |
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| 作者单位： | 华南理工大学电子与信息学院,广州 510640 |
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| 基金项目： | 国家自然科学基金(批准号:845106410100257),广东省自然科学基金(批准号:8451064101000257)资助的课题. |
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| 摘 要： | 以高掺杂Si单晶片作为衬底且充当栅电极,采用磁控溅射法在硅片上沉积HfTiO薄膜作为栅介质层,聚三己基噻吩(P3HT)薄膜作为半导体活性层,金属Au作为源、漏电极,并采用十八烷基三氯硅烷(OTS)对栅介质层表面修饰,在空气环境下成功地制备出聚合物薄膜晶体管(PTFT).PTFT器件测试结果表明,该晶体管在低的驱动电压(<-1 V)下仍呈现出良好的饱和行为,其阈值电压和有效场效应迁移率分别为0.4 V和2.2×10-2 cm2/V ·s.通过对金属-聚合物-氧化物
关键词：
聚合物薄膜晶体管
聚三己基噻吩
场效应迁移率
k栅介质')" href="#">高k栅介质
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| 关 键 词： | 聚合物薄膜晶体管 聚三己基噻吩 场效应迁移率 高k栅介质 |
| 收稿时间： | 2010-01-18 |
Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) |
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| Liu Yu-Rong,Chen Wei,Liao Rong.Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene)[J].Acta Physica Sinica,2010,59(11):8088-8092. |
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| Authors: | Liu Yu-Rong Chen Wei Liao Rong |
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| Institution: | School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,China;School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,China;School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,China |
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| Abstract: | Polymer-based thin film transistors (PTFTs) with poly(3-hexylthiophene) (P3HT) as semiconducting active layers are successfully fabricated on silicon substrates in air which are used as gate electrods. HfTiO film deposited by RF sputtering method is used as gate insulators,and gold metal is used as source and drain electrodes. The HfTiO surface is modified by using octadecyltrichlorosilane solution in the fabrication process. Experimental results indicate that the PTFTs show good saturation behaviors at low drive voltages (<-1 V) with a threshold voltages of 0.4 V and field-effect mobility of 2.2×10-2 cm2/V ·s. The frequency-dependence and hysteresis effect are observed in the C-V measurements for the metal-polymer-oxide-silicon (MPOS) capacitors,and discussed in detail to understand their physical mechanism. |
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| Keywords: | polymer thin-film transistors poly(3-hexylthiophene) field-effect mobility high-k gate dielectric |
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