基底对电沉积制备ZnO纳米棒阵列的影响

采用恒电位电沉积方法, 在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构, 而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上, 制备出透明、高取向、粒径小于30 nm的ZnO纳米棒阵列. 用扫描电子显微镜(SEM)、X射线衍射(XRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征. 测试结果表明, ZnO纳米棒阵列的平均直径为21 nm, 粒径分布窄, 约18～25 nm, 择优生长取向为001]方向, 垂直于基底生长. 当入射光波长大于400 nm时, ZnO纳米棒阵列的透光率大于95%.

Substrate Effect on Electrodeposition of ZnO Nanorod Arrays

ZnO nanocrystallines with different morphologies have been prepared on unmodified ITO substrate by using a potentiostatic electrodeposition method. After the ITO substrate was pre-modified with ZnO nanoparticles, a transparent and highly oriented ZnO nanorod array with a diameter less than 30 nm has been successfully prepared by the electrochemical deposition. The obtained ZnO nanostructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission spectroscopy. The results indicate that the average diameter of ZnO nanorod is about 21 nm, and the size distribution is about 18～25 nm. The nanorods, growing along 001] direction, are perpendicularly oriented to the substrate. When the wavelength of incident light is over 400 nm, the ZnO nanorod array films show high optical transmission of above 95%.