Investigation of barrier tunneling characteristics of symmetrical double quantum well in In0.25Ga0.75As/GaAs/In0.25Ga0.75As heterostructure

The optical and electrophysical properties of the GaAs/In_0.25Ga_0.75As heterostructure with a symmetric double quantum well have been investigated. The influence of tunneling electrons and holes through an internal barrier of the quantum well on the shift and splitting of the quantum levels is analyzed. The theoretical estimates are compared with the results of the photoluminescence and photoconductivity measurements. The Hall measurements indicate that the barrier strongly affects the mobility of charge carriers.