Ionization enhanced crystallization in amorphous germanium

The effect of high-energy electron irradiation upon the kinetics of crystallization of amorphous germanium layers has been studied, using conductivity measurements, during isochronal and isothermal warm-up. An increase in the growth rate of crystallization, induced at the surface or in the bulk, has been observed. It is suggested that this increase is the consequence of the recombination of electron-hole pairs created by the irradiation.