Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell |
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| Authors: | Mehran Minbashi Mir Kazem Omrani Nafiseh Memarian Dae-Hwan Kim |
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| Institution: | 1. Faculty of Physics, Semnan University, Semnan, P.O. Box: 35131-19111, Iran;2. Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, South Korea |
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| Abstract: | The simulation of CZTSSe solar cells is presented in this paper. The simulation results are in reasonable agreement with the experimental data, indicating the reliability of simulation results. New structure is proposed to increase the functionality of the cell. Improved functional performances are achieved by inserting a P-Silicon (P-Si) layer as back surface field. Simulation results suggest that by inserting this P-Si layer, efficiency of the CZTSSe solar cell increases from 12.6% to 16.59%, which is a significant improvement. For the champion cell JSC = 36.27 mA/cm2, VOC = 0.625 V and FF = 73.11% has been achieved. |
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| Keywords: | CZTSSe solar cells Simulation Back surface field P-type silicon S/(S+Se) weight ratio |
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