| 分子束外延n-GaAs/SI-GaAs薄膜材料的拉曼光谱研究 |
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| 引用本文： | 王斌,徐晓轩,秦哲,宋宁,张存洲.分子束外延n-GaAs/SI-GaAs薄膜材料的拉曼光谱研究[J].光谱学与光谱分析,2008,28(9):2103-2106. |
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| 作者姓名： | 王斌 徐晓轩 秦哲 宋宁 张存洲 |
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| 作者单位： | 1. 南开大学泰达应用物理学院，天津 300457
2. 南开大学弱光非线性光子学材料先进技术及制备教育部重点实验室，天津 300457 |
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| 摘 要： | 用分子束外延(MBE)技术, 在GaAs(100)衬底上生长了不同Si掺杂浓度（从1016 cm-3到1018 cm-3）的n-GaAs薄膜。通过在室温下拉曼光谱的测量对n-GaAs薄膜的谱形进行了分析，拉曼位移出现了明显的移动，光学横模TO峰相对的增强，光学纵模LO峰相对的减弱。文章分析了原因这是由于Si掺杂浓度不断的提高，致使界面失配位错不断地提高造成的，内部应力也在不断的增大，原来的晶格振动平衡被破坏，四价Si替代了三价Ga致使谱线移动。并且由于横声子模具有Raman活性，横声子模被相对的增强了。实验结果与理论是互相吻合的。
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| 关 键 词： | 分子束外延 n-GaAs/SI-GaAs 掺杂浓度 拉曼光谱 |
| 收稿时间： | 2007-03-16 |
Raman Spectra Studies of MBE-Grown n-GaAs/SI-GaAs Films |
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| WANG Bin,XU Xiao-xuan,QIN Zhe,SONG Ning,ZHANG Cun-zhou.Raman Spectra Studies of MBE-Grown n-GaAs/SI-GaAs Films[J].Spectroscopy and Spectral Analysis,2008,28(9):2103-2106. |
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| Authors: | WANG Bin XU Xiao-xuan QIN Zhe SONG Ning ZHANG Cun-zhou |
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| Institution: | 1. TEDA Applied Physics School, Nankai University, Tianjin 300457, China2. The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials, Ministry of Education, Nankai University, Tianjin 300457, China |
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| Abstract: | n-GaAs films doped with Si were grown by MBE on semi-insulated GaAs (100) substrates. The films with different doping concents were characterized by Raman spectra at room temperature. It is obviously that the Raman peaks shifted. Some peaks were enhanced and some were weakened. This is attributed to the fact that the higher the doping contents, the highertge lattice mismatch. And the lattice misfit induced the imperfection in epitaxy layers. This experimental result coincides with the theory. |
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| Keywords: | n-GaAs/SI-GaAs |
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