On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

Highly perfect epitaxial heterostructure CoSi₂ films have been grown on the surface of Si (111) and Si (100) single crystals by the method of molecular-beam epitaxy. The optimal regimes of the film growth with different thicknesses have been determined. It has been shown that short-term annealing of epitaxial films at T = 900–950 K leads to the formation of new CoSi₂/Si(111)-2 × 2 and CoSi₂/Si(100)−2 × 4 superstructures.