Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres |
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Authors: | D Mistele F Fedler H Klausing T Rotter J Stemmer O K Semchinova J Aderhold |
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Institution: | Laboratory for Information Technology, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany |
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Abstract: | We investigated the effect of different annealing atmospheres on contact behaviour of Ni/Au contacts on moderately doped p-GaN layers. We used the annealing gases N2, O2, Ar, and forming gas (N2/H2) at varying annealing temperatures from 350°C to 650°C in steps of 50°C. The p-GaN samples were either metalorganic chemical vapor deposition or molecular beam epitaxy grown. Contact characterization was done after each annealing step by using the circular transmission line model. Specific contact resistances were determined to be in the low 10−4 Ω cm2 range for oxidized contacts. Accompanying chemical analysis using depth resolved Auger electron spectroscopy revealed that NiO was formed and Au diffused towards the interface, whereas annealing in forming gas prevented oxidation and did not lead to Ohmic behaviour. |
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Keywords: | A3 Metalorganic chemical vapor deposition A3 Molecular beam epitaxy B1 Gallium compounds B1 Metals B1 Nitrides B2 Semiconducting III–V materials |
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